Application of polarization resolved photoluminescence to the study of quantum well intermixing in InGaAsP systems

A room-temperature spatially resolved and polarization resolved photoluminescence (PL) technique is demonstrated to be a useful tool for studying the intermixing process in InGaAsP multiple-quantum-well systems disordered by focused ion beam implantation. This technique produces maps of the spectral uniformity, degree of polarization, and PL yield at room temperature. Information on spectral shift (i.e., bandgap change) and anisotropy in the implanted region can be obtained from these maps. A significant enhancement in PL yield (up to 40%) for Si+ implanted line patterns was observed.