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Investigation of terbium-doped silicon oxide thin...
Journal article

Investigation of terbium-doped silicon oxide thin films: comparison of TEM images prepared by FIB and mechanical methods

Abstract

This study characterizes the optical and structural properties of terbium-doped oxygen-rich silicon oxide (ORSO:Tb) thin films and investigates focused ion beam (FIB)-induced damage on transmission electron microscopy (TEM) lamellae prepared from these films. While there are significant advantages to the FIB technique, there is a potential that energetic ions used during the FIB process can damage the lamellae. A comparative analysis of TEM …

Authors

Hezaveh PB; Mascher P; Khatami Z

Journal

Semiconductor Science and Technology, Vol. 40, No. 5,

Publisher

IOP Publishing

Publication Date

May 30, 2025

DOI

10.1088/1361-6641/adccf2

ISSN

0268-1242