Journal article
Investigation of terbium-doped silicon oxide thin films: comparison of TEM images prepared by FIB and mechanical methods
Abstract
This study characterizes the optical and structural properties of terbium-doped oxygen-rich silicon oxide (ORSO:Tb) thin films and investigates focused ion beam (FIB)-induced damage on transmission electron microscopy (TEM) lamellae prepared from these films. While there are significant advantages to the FIB technique, there is a potential that energetic ions used during the FIB process can damage the lamellae. A comparative analysis of TEM …
Authors
Hezaveh PB; Mascher P; Khatami Z
Journal
Semiconductor Science and Technology, Vol. 40, No. 5,
Publisher
IOP Publishing
Publication Date
May 30, 2025
DOI
10.1088/1361-6641/adccf2
ISSN
0268-1242