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Metallization stress in weakly guiding InP/InGaAsP...
Journal article

Metallization stress in weakly guiding InP/InGaAsP waveguides

Abstract

Although contact metallization causes stress in the underlying material, the magnitude of the resulting change in refractive index is often not appreciated. We investigate here the distribution of the change in refractive index due to stress caused by Ti/Pt/Au contact layers in weakly guiding InGaAsP waveguides operating near 1.3 mu m. Polarization-resolved photoluminescence and beam propagation calculations, combined with a simple stress …

Authors

Daly MG; Bruce DM; Jessop PE; Cassidy DT; Yevick D

Journal

Semiconductor Science and Technology, Vol. 9, No. 7,

Publisher

IOP Publishing

Publication Date

July 1, 1994

DOI

10.1088/0268-1242/9/7/016

ISSN

0268-1242