Journal article
The effect of different proximity caps on quantum well intermixing in InGaAsP/InP QW structures
Abstract
A low-temperature InP-cap layer is used to enhance quantum well intermixing (QWI) following rapid thermal annealing (RTA) on an InGaAsP quantum well (QW) structure. The influence of different proximity caps (Si, InP and GaAs) used during the RTA step has been investigated. A combination of cross-sectional transmission electron microscopy and high-resolution TEM together with energy-dispersive x-ray analysis directly reveals compositional and …
Authors
Hulko O; Thompson DA; Czaban JA; Simmons JG
Journal
Semiconductor Science and Technology, Vol. 21, No. 7,
Publisher
IOP Publishing
Publication Date
July 1, 2006
DOI
10.1088/0268-1242/21/7/008
ISSN
0268-1242