Journal article
Reduction of composition modulation of InGaAsP grown by atomic-hydrogen-assisted epitaxy producing improved double-heterostructure laser performance
Abstract
InGaAsP laser structures with bandgap wavelengths of 1.15, 1.3 and have been grown on (100) InP substrates by gas source molecular beam epitaxy with and without a simultaneous flux of atomic hydrogen. Broad-area lasers have been fabricated and characterized. Higher threshold current densities and lower slope efficiencies are observed for active region compositions that lie deepest within the miscibility gap and which exhibit greater lateral …
Authors
LaPierre RR; Thompson DA; Robinson BJ
Journal
Semiconductor Science and Technology, Vol. 13, No. 6,
Publisher
IOP Publishing
Publication Date
June 1, 1998
DOI
10.1088/0268-1242/13/6/017
ISSN
0268-1242