publication venue for
- Modeling the suppression of boron diffusion in Si∕SiGe due to carbon incorporation 2006
- Progress toward a 30 nm silicon metal–oxide–semiconductor gate technology 1999
- Effect of the forward biasing the source-substrate junction in n-metal–oxide–semiconductor transistors for possible low power complementary metal–oxide–semiconductor integrated circuits’ applications 1998
- Low frequency noise in heavily doped polysilicon thin film resistors 1998
- Application of an in situ hydrogen plasma to the epitaxial regrowth of InP grown by molecular beam epitaxy 1993
- Modeling and characteristics of bistable optoelectronic switches and heterojunction field effect transistors in molecular-beam epitaxially grown SiGe/Si 1993
- Molecular-beam epitaxially grown InP/InGaAsP heterostructure for inversion-channel devices 1993
- High quality factor silicon nitride nanomechanical resonators fabricated by maskless femtosecond laser micromachining. 41. 2023
- Strain engineering in III-V photonic components through structuration of SiNx films. 40. 2022
- Closed-cycle cooling of cryopanels in molecular beam epitaxy. 32. 2014
- Closed cycle chiller as a low cost alternative to liquid nitrogen in molecular beam epitaxy. 31. 2013
- Secondary electron deposition mechanism of carbon contamination. 30. 2012
- Etch properties of resists modified by sequential infiltration synthesis. 29:06FG01-06FG01. 2011
- Passivation of GaAs by octadecanethiol self-assembled monolayers deposited from liquid and vapor phases. 27:637-648. 2009
- Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes. 26:636-642. 2008
- Solutions to a proximity effect in high resolution electron beam induced deposition. 25:1603-1608. 2007
- Performance of organic thin-film transistors. 24:1728-1733. 2006
- Technique for site-specific plan-view transmission electron microscopy of nanostructural electronic devices. 23:1107-1109. 2005
- Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si. 20:427-430. 2002
- Investigation of the bonding strength and interface current of p-Si/n-GaAs wafers bonded by surface activated bonding at room temperature. 19:2114-2118. 2001
- Scanning capacitance microscopy imaging of silicon metal-oxide-semiconductor field effect transistors. 18:2034-2038. 2000
- Mapping of wafer profile to plasma processing conditions: Forward and reverse maps. 18:299-302. 2000
- Blurring effect analysis of an x-ray mask for synchrotron radiation lithography. 16:1992-1997. 1998
- Strain-induced birefringence in Si1−xGex optical waveguides. 16:1773-1776. 1998
- Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal–oxide–semiconductor field effect transistors. 16:628-632. 1998
- Role of atomic hydrogen in argon plasma-assisted epitaxy of InGaAsP/InP. 15:1707-1714. 1997
- Thin-film induced stress in GaAs ridge-waveguide structures integrated with sputter-deposited ZnO films. 12:1328-1332. 1994
- Identification of volatile products in low pressure hydrocarbon electron cyclotron resonance reactive ion etching of InP and GaAs. 11:2038-2045. 1993