Molecular-beam epitaxially grown InP/InGaAsP heterostructure for inversion-channel devices

A heterostructure, based on InP/InGaAsP alloys grown by gas source molecular-beam epitaxy, is presented which can be used to implement the inversion-channel family of devices. The double-heterostructure optoelectronic switch (DOES) is demonstrated for the first time in the InP/InGaAsP materials system and the current density versus voltage characteristics are presented. Numerical simulations are used to demonstrate the tolerances required in materials growth, doping, and layer thickness in order to successfully realize the heterostructure and the associated I–V characteristics of the DOES. In addition, material and interface quality are shown by simulations to affect the I–V characteristics of the InP/InGaAsP-based DOES.