Investigation of the bonding strength and interface current of p-Si/n-GaAs wafers bonded by surface activated bonding at room temperature
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Overview
status
publication date
- 2001
has subject area
- 0401 Atmospheric Sciences (FoR)
- 0901 Aerospace Engineering (FoR)
- 0912 Materials Engineering (FoR)
- Applied Physics (Science Metrix)