Journal article
Etch properties of resists modified by sequential infiltration synthesis
Abstract
The etch resistance of electron-beam lithography resists, poly(methyl methacrylate) (PMMA) and ZEP520A, is increased significantly by sequential infiltration synthesis (SIS). This process infiltrates the bulk of the resist film with alumina, rendering it resistant to plasma etching. The enhanced etch resistance eliminates the need for an intermediate hard mask and the associated process costs and pattern fidelity losses. Furthermore, the …
Authors
Tseng Y-C; Peng Q; Ocola LE; Czaplewski DA; Elam JW; Darling SB
Journal
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Vol. 29, No. 6,
Publisher
American Vacuum Society
Publication Date
November 2011
DOI
10.1116/1.3640758
ISSN
2166-2746