Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal–oxide–semiconductor field effect transistors

The latest evolution in complementary metal–oxide–semiconductor technology has made the metal–oxide–semiconductor field effect transistor (MOSFET) a viable choice for rf applications, especially for frequencies in the low GHz region. However, hot-carrier effects should also be considered carefully when the devices are operating in the GHz regime. Here, we studied the effects of dc hot-carrier stress on lightly doped drain (LDD) n-type MOSFET …