supported publications or other works Annealing Temperature-Dependent Interfacial Behavior of Sequentially Plasma-Activated Silicon Bonded Wafers Journal Articles Comparative annealing effect on bonded wafers in air and ultrahigh vacuum for microelectromechanical systems/microfluidics packaging Journal Articles Hybrid plasma bonding for void-free strong bonded interface of silicon/glass at 200°C Journal Articles Hybrid plasma bonding of germanium and glass wafers at low temperature Journal Articles Influence of nitrogen microwave radicals on sequential plasma activated bonding Journal Articles Low temperature nanointegration for emerging biomedical applications Journal Articles Nanobonding Technology Toward Electronic, Fluidic, and Photonic Systems Integration Journal Articles Sequential Plasma-Activated Bonding Mechanism of Silicon/Silicon Wafers Journal Articles Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature Journal Articles Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C Journal Articles