supported publications or other works
- Annealing Temperature-Dependent Interfacial Behavior of Sequentially Plasma-Activated Silicon Bonded Wafers Journal Articles
- Comparative annealing effect on bonded wafers in air and ultrahigh vacuum for microelectromechanical systems/microfluidics packaging Journal Articles
- Hybrid plasma bonding for void-free strong bonded interface of silicon/glass at 200°C Journal Articles
- Hybrid plasma bonding of germanium and glass wafers at low temperature Journal Articles
- Influence of nitrogen microwave radicals on sequential plasma activated bonding Journal Articles
- Low temperature nanointegration for emerging biomedical applications Journal Articles
- Nanobonding Technology Toward Electronic, Fluidic, and Photonic Systems Integration Journal Articles
- Sequential Plasma-Activated Bonding Mechanism of Silicon/Silicon Wafers Journal Articles
- Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature Journal Articles
- Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C Journal Articles