Influence of nitrogen microwave radicals on sequential plasma activated bonding

The role of nitrogen microwave (MW) radicals in sequential plasma activated bonding of silicon/silicon has been investigated through contact angle and electron energy loss spectroscopy (EELS) observations. The contact angle for the sequentially activated (using oxygen RIE time for 60s followed by variable times of nitrogen MW) silicon surfaces was higher than that of the oxygen RIE activated surfaces below 300s but it was lower than that of the …