Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C
Journal Articles
- Overview
- Research
- Identity
- Additional Document Info
- View All
Overview
status
publication date
- November 2010
has subject area
- 02 Physical Sciences (FoR)
- 09 Engineering (FoR)
- 10 Technology (FoR)
- Applied Physics (Science Metrix)
published in
- Thin Solid Films Journal