Journal article
Sequential Plasma-Activated Bonding Mechanism of Silicon/Silicon Wafers
Abstract
To investigate the sequentially plasma-activated bonding (SPAB) mechanism of silicon/silicon wafers, the surface hydrophilicity, and the interface voids, nanostructures and chemical compositions that control the bonding quality, such as bonding strength, have been observed. Although the sequentially plasma-activated surfaces are hydrophilic, the SPAB mechanism is not identical to the hydrophilic bonding. SPAB shows high bonding strength at room …
Authors
Howlader MMR; Kagami G; Lee SH; Wang JG; Kim MJ; Yamauchi A
Journal
Journal of Microelectromechanical Systems, Vol. 19, No. 4, pp. 840–848
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
August 1, 2010
DOI
10.1109/jmems.2010.2049731
ISSN
1057-7157