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Multiple Quantum Well AlGaAs Nanowires
Journal article

Multiple Quantum Well AlGaAs Nanowires

Abstract

This letter reports on the growth, structure, and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy performed on individual NWs are consistent with a …

Authors

Chen; Braidy N; Couteau C; Fradin C; Weihs G; LaPierre R

Journal

Nano Letters, Vol. 8, No. 2, pp. 495–499

Publisher

American Chemical Society (ACS)

Publication Date

February 1, 2008

DOI

10.1021/nl0726306

ISSN

1530-6984