Silicon-on-insulator waveguide photodetector with self-ion-implantation-engineered-enhanced infrared response

We describe the fabrication and characterization of silicon-on-insulator, p+-i-n+ waveguide photodetectors with enhanced sensitivity to wavelengths around 1550nm. Increased sensitivity to sub-band-gap light results from the deliberate introduction of mid-band-gap defects via 1.5MeV silicon-ion implantation to a dose of 1×1012cm−2. For a waveguide of length of 6mm, an on-chip signal of 3.5dBm generates a photocurrent of 5μA while the …