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Isolator-Free Integration of C-Band InAs-InP...
Conference

Isolator-Free Integration of C-Band InAs-InP Quantum Dash Buried Heterostructure Lasers with Silicon Waveguides

Abstract

An InAs-on-InP quantum dash buried heterostructure laser and silicon chip optimized for mutual integration by direct facet-to-facet coupling have achieved −1.2 dB coupling efficiency, with coupled laser RIN of −150 dB/Hz and 152 kHz linewidth.

Authors

Schmid JH; Rahim M; Pakulski G; Vachon M; Janz S; Cheben P; Xu D-X; Poole PJ; Barrios P; Jiang W

Volume

00

Pagination

pp. 1-3

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

July 19, 2020

DOI

10.1109/icton51198.2020.9203227

Name of conference

2020 22nd International Conference on Transparent Optical Networks (ICTON)

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