Nonsteady-state techniques for determining the energy distribution of interface traps in MNOS (memory) devices Journal Articles uri icon

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abstract

  • New techniques are used to obtain the energy distribution of interface traps throughout the band gap of MNOS devices. The techniques are based on thermal and isothermal dielectric relaxation current techniques. It is demonstrated that the techniques are capable of detecting small changes in the trap distribution, such as might occur due to ageing or termperature cycling.

publication date

  • June 15, 1975