ANALYSIS OF Sb-IMPLANTED SILICON BY (p, p) SCATTERING AND HALL MEASUREMENTS Journal Articles

abstract

• The annealing behavior of Si crystals, implanted with ∼1015 Sb ions/cm2 at 40 keV, has been studied by observing the orientation dependence of the scattering yield of 1.0-MeV protons and also by electrical measurements. The scattering measurements provide information on the sites of the implanted atoms and on the extent of lattice disorder. After a room temperature implant, the lattice is heavily damaged, with the Sb occupying random (or interstitial) positions. After annealing at 650°C, ∼75% of the Sb is substitutional with very little damage remaining. Comparable results are obtained in a 400°C implant.

authors

• Eriksson, L
• Davies, John Arthur
• Denhartog, J
• Mayer, JW
• Marsh, OJ
• Markarious, R

status

• published 

publication date

• June 1, 1967

has subject area

• 02 Physical Sciences (FoR)
• 09 Engineering (FoR)
• 10 Technology (FoR)
• Applied Physics (Science Metrix)

published in

• Applied Physics Letters  Journal

keywords

• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1063/1.1754830

start page

• 323

end page

• 325

volume

• 10

issue

• 11