Nonequilibrium response of MOS devices to linearly varying voltages Journal Articles uri icon

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abstract

  • The non-steady-state I-V response of a MOS capacitor subjected to a linear voltage ramp has been studied. The characteristic exhibits structure and is strongly temperature dependent. Furthermore, the characteristic is shown to be a consequence of bulk generation in the silicon, and the parameters of the traps involved in the process are determined.

publication date

  • April 1, 1978