Growth of dense SiC films on Si at medium temperatures by pulsed laser deposition Journal Articles uri icon

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  • Thin SiC films were grown on (100) Si substrates by the pulsed laser deposition technique at medium temperatures. The influence of the substrate temperature, from 550 to 700 °C, and of the laser repetition rate upon film composition and optical properties has been investigated. Using a 2.5 J/cm2 laser fluence and a 10 Hz repetition rate, dense and finely crystalline SiC films exhibiting very good optical properties and containing less than 2% oxygen were grown at a substrate temperature of only 700 °C.


  • Craciun, Valentin
  • Lambers, Eric
  • Bassim, Nabil
  • Baney, Ronald H
  • Singh, Rajiv K

publication date

  • September 1, 2001