Novel infrared detector concept utilizing controlled epitaxial doping profiles Journal Articles

abstract

• A novel infrared detector concept is proposed and experimentally demonstrated. Because of the flexibility provided by modern epitaxial growth techniques, we use thin heavily doped Si layers for infrared absorption via free-carrier-related processes, and the active region is sandwiched in a p-n junction. Silicon-based materials for long-wavelength infrared applications are highly desirable because of the possibilities for advanced Si circuit technology.

authors

• Liu, HC
• Noël, J-P
• Li, Lujian
• Buchanan, M
• Simmons, John

status

• published 

publication date

• June 29, 1992

has subject area

• 02 Physical Sciences (FoR)
• 09 Engineering (FoR)
• 10 Technology (FoR)
• Applied Physics (Science Metrix)

published in

• Applied Physics Letters  Journal

keywords

• DOPED SILICON
• Physical Sciences
• Physics
• Physics, Applied
• Science & Technology

Digital Object Identifier (DOI)

• 10.1063/1.106725

start page

• 3298

end page

• 3300

volume

• 60

issue

• 26