publication venue for
- Enhanced helium release by hydrogen isotope charging in polycrystalline nickel. 128:247-256. 1994
- Deuterium diffusion, trapping and release in ion-implanted nickel. 117:285-297. 1991
- Studies on Cr-Mo binary alloys: I. surface composition modifications induced by ion bombardment. 115:315-333. 1991
- A comparison between electron and ion damage in quartz. 112:39-45. 1990
- Ion implantation damage in CdS. 98:289-300. 1986
- Disorder production in ion implanted gallium arsenide at 40 K. 71:95-107. 1983
- Annealing studies of ion-implanted gaas in the 40–300 K range. 66:15-20. 1982
- A first order diffusion approximation to atomic redistribution during ion bombardment of solids, II. finite range approximation. 55:99-110. 1981
- High density cascade effects. 56:105-150. 1981
- Influence of the bombarding angle on the sputtering yield of heavy atomic and molecular ion bombardment of Ag and Auf. 55:91-98. 1981
- Annealing of heavy ion cascade damage in silicon. 50:125-131. 1980
- Anomalous surface damage in ion bombarded silicon from channelling-backscattering measurements. 46:71-77. 1980
- Disorder production and amorphisation in ion implanted silicon. 52:69-84. 1980
- Evidence for a thermal spike mechanism in the erosion of frozen xenon. 49:203-212. 1980
- The influence of incident flux dependent radiation enhanced diffusion on composition changes of sputtered binary solids. 40:119-121. 1979
- Computer simulation of ion bombardment collision cascades. 37:113-120. 1978
- Contribution of strain effects toward the damage measured in semiconductors by channeling. 36:205-214. 1978
- Energy spikes in Si and Ge due to heavy ion bombardment. 36:91-100. 1978
- A semiempirical method of applying the dechanneling correction in the extraction of disorder distribution. 34:157-161. 1977
- Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge. 32:135-142. 1977
- Inelastic stopping of medium energy light ions in silicon. 32:169-175. 1977
- Channeling measurements of damage in ion bombarded semiconductors at 50° K. 30:37-46. 1976