Ion implantation damage in CdS

Lattice disorder produced by ion implantation of CdS crystals with Bi+, Kr+, Ar+ and Ne+ has been studied using RBS/Channeling and Transmission Electron Microscopy (TEM). Channeling measurements of the damage, as represented by an apparent number of displaced atoms, N D , obtained from the surface peak and by the change in the dechanneling, level, ΔX min, behind the surface peaks, have been studied as a function of channeling direction (c- and a-axis), He+ beam energy (0.8–2.8 MeV), implant and analysis temperature (50 K and 300 K). The channeling measurements are consistent with the TEM observations that the damage is primarily in the form of interstitial type dislocation loops which predominantly lie with a Burgers vector parallel to the a-axis. Both techniques confirm that implantation does not produce an amorphous layer in CdS.