publication venue for
- Resonant transfer and excitation (RTE) in He-like 79Br ions channeled along the 〈110〉 direction in Si 1993
- Reminiscences from the 1950s and 1960s. 166:327-337. 2011
- Enhanced helium release by hydrogen isotope charging in polycrystalline nickel. 128:247-256. 1994
- Deuterium diffusion, trapping and release in ion-implanted nickel. 117:285-297. 1991
- Studies on Cr-Mo binary alloys: I. surface composition modifications induced by ion bombardment. 115:315-333. 1991
- A comparison between electron and ion damage in quartz. 112:39-45. 1990
- Ion implantation damage in CdS. 98:289-300. 1986
- Disorder production in ion implanted gallium arsenide at 40 K. 71:95-107. 1983
- Annealing studies of ion-implanted gaas in the 40–300 K range. 66:15-20. 1982
- A first order diffusion approximation to atomic redistribution during ion bombardment of solids, II. finite range approximation. 55:99-110. 1981
- High density cascade effects. 56:105-150. 1981
- Influence of the bombarding angle on the sputtering yield of heavy atomic and molecular ion bombardment of Ag and Auf. 55:91-98. 1981
- Annealing of heavy ion cascade damage in silicon. 50:125-131. 1980
- Anomalous surface damage in ion bombarded silicon from channelling-backscattering measurements. 46:71-77. 1980
- Disorder production and amorphisation in ion implanted silicon. 52:69-84. 1980
- Erosion of frozen-gas films by MeV ions. 49:119-123. 1980
- Evidence for a thermal spike mechanism in the erosion of frozen xenon. 49:203-212. 1980
- The importance of screening corrections in accurate RBS measurements at MeV energies. 47:229-232. 1980
- The influence of incident flux dependent radiation enhanced diffusion on composition changes of sputtered binary solids. 40:119-121. 1979
- Backscattering measurements of the temperature dependence of irradiation-induced displacement of as and sb atoms in Si crystals. 35:51-59. 1978
- Computer simulation of ion bombardment collision cascades. 37:113-120. 1978
- Contribution of strain effects toward the damage measured in semiconductors by channeling. 36:205-214. 1978
- Energy spikes in Si and Ge due to heavy ion bombardment. 36:91-100. 1978
- A semiempirical method of applying the dechanneling correction in the extraction of disorder distribution. 34:157-161. 1977
- Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge. 32:135-142. 1977
- Inelastic stopping of medium energy light ions in silicon. 32:169-175. 1977
- Molecular and atomic damage in germanium. 32:187-191. 1977
- Channeling measurements of damage in ion bombarded semiconductors at 50° K. 30:37-46. 1976
- The use of si surface barrier detectors for energy calibration of mev ion accelerators. 28:133-139. 1976
- A channeling investigation of proton and deuteron damage in germanium. 26:193-199. 1975
- Backscattering analysis of ion bombardment damage in Nb and W at low (25°K) temperature. 21:25-30. 1974
- Lattice disorder studies in low-temperature nitrogen-implanted silicon. 20:257-263. 1973
- Dechanneling of MeV protons in tungsten. 12:247-253. 1972
- Substitutional doping during low-dose implantation of Bi and Ti ions in Si at 25°C. 1:71-73. 1969