Optical bistability in the GaAs/AlGaAs bistable field effect transistor

Optical emission is reported from an n-channel GaAs/AlGaAs bistable field effect transistor (BISFET). This emission is found to be strongly correlated with the gate current flowing in the device. Abrupt transitions, referred to as optical switchup and switchdown, are observed in the optical output characteristics as the drain bias is varied, with a switching ratio in excess of 20 dB. These transitions correspond with those seen in the drain and …