Modeling Defect Enhanced Detection at 1550 nm in Integrated Silicon Waveguide Photodetectors

Recent attention has been attracted by photo-detectors integrated onto silicon-on-insulator (SOI) waveguides that exploit the enhanced sensitivity to subbandgap wavelengths resulting from absorption via point defects introduced by ion implantation. In this paper, we present the first model to describe the carrier generation process of such detectors, based upon modified Shockley-Read-Hall generation/recombination, and, thus, determine the …