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Effect of barrier height on the uneven carrier...
Journal article

Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers

Abstract

Four asymmetric multiple-quantum-well (AMQW) laser structures have been grown and tested. The structures demonstrate that carriers are not evenly distributed across the active region of a MQW laser. Wells at the p-side of the active region are preferentially pumped indicating there are more carriers at the p-side of the active region than at the n-side. The structures also demonstrate that decreasing the height of the barriers reduces this effect and results in a more even carrier distribution. Thus, well position and barrier height are shown to be important design parameters for AMQW and conventional MQW lasers.

Authors

Hamp MJ; Cassidy DT; Robinson BJ; Zhao QC; Thompson DA; Davies M

Journal

IEEE Photonics Technology Letters, Vol. 10, No. 10, pp. 1380–1382

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

October 1, 1998

DOI

10.1109/68.720267

ISSN

1041-1135

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