Conference
Ion implantation induced compositional intermixing in the InGaAsInP MQW system for wavelength shifted waveguides
Abstract
Compositional disorder and interdiffusion in lattice-matched and strained-layer InxGa1−x AsInP multiple quantum wells (MQWs), subjected to ion implantation and subsequent thermal annealing, have been studied. Measurements have shown that MQWs with compressively strained compositions are preferred for the fabrication of 1.3 and 1.55 μm integrated laser/waveguide devices. Shallow implantation induces small useable energy bandgap blue-shifts of …
Authors
Wan JZ; Thompson DA; Simmons JG
Volume
106
Pagination
pp. 461-465
Publisher
Elsevier
Publication Date
12 1995
DOI
10.1016/0168-583x(95)00753-9
Conference proceedings
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
Issue
1-4
ISSN
0168-583X