Conference
Laser-induced explosive boiling during nanosecond laser ablation of silicon
Abstract
The surface morphology of single crystal (100) Si wafers irradiated by 266 and 1064nm laser pulses emitted by a Nd:YAG laser has been investigated. The morphology of the bottom of craters formed as a result of single or multipulse laser irradiation by the 266nm wavelength, which is well absorbed by Si (optical absorption coefficient, α ∼106cm−1), remained flat and almost featureless up to the maximum fluence of 18J/cm2 used in this study. The …
Authors
Craciun V; Bassim N; Singh RK; Craciun D; Hermann J; Boulmer-Leborgne C
Volume
186
Pagination
pp. 288-292
Publisher
Elsevier
Publication Date
January 2002
DOI
10.1016/s0169-4332(01)00766-8
Conference proceedings
Applied Surface Science
Issue
1-4
ISSN
0169-4332