Conference
Metal-organic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates
Abstract
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by metal-organic chemical-vapor deposition on Si(111) substrates. A reflectance greater than 96% was demonstrated for an AlN∕GaN DBR with a stop band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelectronic devices in this material. …
Authors
Mastro MA; Holm RT; Bassim ND; Gaskill DK; Culbertson JC; Fatemi M; Eddy CR; Henry RL; Twigg ME
Volume
24
Pagination
pp. 1631-1634
Publisher
American Vacuum Society
Publication Date
July 2006
DOI
10.1116/1.2172937
Conference proceedings
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Issue
4
ISSN
0734-2101