Conference
Nanobonding for Multi-Junction Solar Cells at Room Temperature
Abstract
Direct nanobonding of p-Si/n-GaAs wafers based on surface activation that uses an Argon (Ar)-fast atom beam at room temperature has been investigated. The bonding strength of the interface was 14.4 MPa at room temperature, and remained nearly constant after annealing up to 600 °C. An amorphous layer with a thickness of 11.5 nm was found across the interface without annealing. After annealing, the electrical current-voltage (I-V) characteristics …
Authors
Yu T; Howlader MR; Zhang F; Bakr M
Volume
35
Pagination
pp. 3-10
Publisher
The Electrochemical Society
Publication Date
April 25, 2011
DOI
10.1149/1.3568842
Conference proceedings
ECS Transactions
Issue
2
ISSN
1938-5862