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Performance Enhancement of Ge/Si APDs by Electric...

Performance Enhancement of Ge/Si APDs by Electric Field Engineering in the Multiplication Region

Abstract

We report the performance enhancement of Germanium-on-Silicon Avalanche Photodiodes via electric field reshaping using an N-doped multiplication region. In this work, we demonstrate doping-dependent field modulation that enables a significant reduction in breakdown voltage and improved responsivity.

Authors

Guo F; Knights AP

Volume

00

Pagination

pp. 1-2

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

June 5, 2026

DOI

10.1109/pn70808.2026.11657722

Name of conference

2026 Photonics North (PN)

Associated Experts

Andrew Knights

Professor, Engineering Physics

Labels

Fields of Research (FoR)

51 Physical Sciences 40 Engineering 4018 Nanotechnology

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Performance Enhancement of Ge/Si APDs by Electric...