Home
Scholarly Works
Ion-Implantation Effects on Active Silicon Ring...
Conference

Ion-Implantation Effects on Active Silicon Ring Resonator

Abstract

We report post-fabrication trimming of silicon-on-insulator micro-ring resonators via introducing lattice defects by using ion-implantation. In this work, we demonstrate dose-dependent ion-implantation effects that enable wavelength shifts in opposing directions for annealed silicon ring resonators.

Authors

Guo F; Knights AP

Volume

00

Pagination

pp. 1-2

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

May 23, 2025

DOI

10.1109/pn66844.2025.11097199

Name of conference

2025 Photonics North (PN)

Labels

View published work (Non-McMaster Users)

Contact the Experts team