Preprint
Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots
Abstract
We explore the Bi-surfactant-directed self-assembly and structure of InAs
quantum dots grown on GaAs(110) by molecular beam epitaxy. The addition of a Bi
Authors
Lewis RB; Trampert A; Luna E; Herranz J; Pfüller C; Geelhaar L
Publication date
May 13, 2019
DOI
10.48550/arxiv.1905.05303
Preprint server
arXiv