Monolithic silicon avalanche photodetector utilizing surface state defects operating at 1550 nm

In this work, we report on all-silicon waveguide photodetectors utilizing surface state defects and bulk defects to sensitize the silicon to sub-bandgap light. The detectors are foundry fabricated, waveguide-integrated p-i-n junctions with post-processing consisting of HF acid exposure, ion implantation, annealing, or a combination of the three. HF exposure increases the photoresponse of the as-received detectors due to the increase in …