Effects of surface roughness and single Shockley stacking fault expansion on the electroluminescence of 4H-SiC

The electroluminescence of a 4H silicon carbide (SiC) bipolar junction transistor was studied using the base-collector junction after a side-wall facet was exposed. This sidewall was ground and polished in sequential stages with increasing grit numbers. After each stage, an electrical stress test under forward bias was performed. Electroluminescence spectra with peaks at 390 nm, 445 nm and 500 nm were initially observed. These peaks were seen …