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Muon spin relaxation study of the (FμF)− ion in...
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Muon spin relaxation study of the (FμF)− ion in magnetic fluorides

Abstract

A positive muon implanted in a solid fluoride insulator can form a hydrogen-bonded (FμF)− ion, in which the nuclear magnetic interactions cause a distinctive zero-field (ZF) muon spin relaxation (μSR) signal. In a fluoride material in which the anions have electronic magnetic moments, the muon’s interaction with nearby 19F nuclear moments must compete with its interaction with more distant but much larger anion moments. We report observation of …

Authors

Noakes DR; Ansaldo EJ; Luke GM

Volume

73

Pagination

pp. 5666-5668

Publisher

AIP Publishing

Publication Date

May 15, 1993

DOI

10.1063/1.353584

Conference proceedings

Journal of Applied Physics

Issue

10

ISSN

0021-8979