Room-temperature operation and threshold temperature dependence of LPE-grown In x Ga1− x As homojunction lasers

InxGa1−xAs homojunction lasers prepared by liquid-phase epitaxy have been operated from below 77 °K to room temperature. Lowest thresholds were Jth=2000 A/cm2 at 77 °K and 290 000 A/cm2 at room temperature. The variation of threshold with temperature can be fit by either Jth∼T3 or Jth∼exp(T/67 °K) above ∼150 °K, and by Jth∼T2.3 at lower temperatures.