Journal article
Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1−xN core/shell nanowire heterostructures on Si(111) substrates
Abstract
We report on the achievement of, for the first time, InN/InGaN core/shell nanowire heterostructures, which are grown directly on Si(111) substrates by plasma-assisted molecular beam epitaxy. The crystalline quality of the heterostructures is confirmed by transmission electron microscopy, and the elemental mapping through energy dispersive x-ray spectrometry further reveals the presence of an InGaN shell covering the sidewall and top regions of …
Authors
Cui K; Fathololoumi S; Kibria G; Botton GA; Mi Z
Journal
Nanotechnology, Vol. 23, No. 8,
Publisher
IOP Publishing
Publication Date
March 2, 2012
DOI
10.1088/0957-4484/23/8/085205
ISSN
0957-4484