Conference
[001] interface anisotropy using degree of polarization [quantum wells]
Abstract
The authors report the measurement of the polarization of luminescence from the [001] surface ([001] growth direction) and relate the observations to interfacial structure of the quantum wells in zinc blende semiconductors.
Authors
Lakshmi B; Robinson BJ; Cassidy DT
Pagination
pp. 27-30
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1996
DOI
10.1109/iciprm.1996.491925
Name of conference
Proceedings of 8th International Conference on Indium Phosphide and Related Materials