Conference
High sensitivity defect-enhanced silicon ring-resonator photodetectors at telecom wavelengths
Abstract
We report the fabrication and characterization of a 29 mA/W sensitivity integrated silicon microring photodetector at 1550 nm. It is formed by a lateral p-i-n junction and defects incorporation via high-energy ion implantation. © 2010 Optical Society of America.
Authors
Logan D; Velha P; Sorel M; De La Rue R; Knights AP; Jessop PE
Publication Date
January 1, 2010
DOI
10.1364/iprsn.2010.iwf6
Conference proceedings
Optics Infobase Conference Papers