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AlGaN Nanowire Ultraviolet Lasers on Si
Conference

AlGaN Nanowire Ultraviolet Lasers on Si

Abstract

In this work, we demonstrate electrically injected ultraviolet lasers by spontaneously formed AlGaN nanowires on Si. The optical cavity is formed due to the Anderson localization of light.

Authors

Zhao S; Liu X; Li K-H; Woo SY; Botton G; Mi Z

Pagination

pp. 127-128

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

July 1, 2015

DOI

10.1109/phosst.2015.7248227

Name of conference

2015 IEEE Summer Topicals Meeting Series (SUM)