Conference
Silicon-germanium-based combined MBE and CVD processing for vertical "silicon-on-nothing" (SON) device technology
Abstract
A combined molecular beam epitaxy (MBE) / chemical vapor deposition (CVD) processing sequence for the fabrication of vertical fully-depleted and partially-depleted "silicon-on-nothing" metal-oxide-semiconductor (MOS) devices is introduced. The key idea is that the transistor channel length as well as depletion width are determined by means of well defined epitaxial deposition in the sub-30nm regime. To obtain the "silicon-on-nothing" (SON) …
Authors
Schulze J; Eisele I; Thompson PE; Jernigan G; Bassim N; Suligoj T
Volume
7
Pagination
pp. 719-729
Publication Date
December 1, 2004
Conference proceedings
Proceedings Electrochemical Society