Conference
Sequential Plasma Activated Process for Silicon Direct Bonding
Abstract
Sequential plasma activated bonding (SPAB) process consisting of oxygen reactive ion etching (RIE) and nitrogen microwave radical plasma was developed for silicon direct bonding at room temperature. A strong influence of plasma time and gas pressure on voids was found both in the SPAB and O2 RIE processes. Tensile strength and surface roughness are functions of oxygen RIE, nitrogen radical time and gas pressure. Improved tensile strength was …
Authors
Howlader MR; Itoh H; Suga T; Kim M
Volume
3
Pagination
pp. 191-202
Publisher
The Electrochemical Society
Publication Date
October 20, 2006
DOI
10.1149/1.2357070
Conference proceedings
ECS Transactions
Issue
6
ISSN
1938-5862