Electrically Enhanced Boron Removal from Silicon Using Slag

An approach to enhance silicon refining using slag has been developed. The enhancement of the process was carried out by applying electrical potential difference across the slag and the silicon phase. This resulted in a shift in the apparent equilibrium in favor of higher partition ratio for the impurities. The application of electrical potential difference also enhanced the mass transfer rate increasing the overall kinetics of the process. This has been demonstrated in laboratory experimentations for the removal of boron from silicon-boron melts using slag. A CaO-SiO2-Al2O3 slag was reacted with Si-B melt at 1823 K (1550 °C). Electrical potential differences were applied through graphite rods immersed in each of the liquid phase. The results showed that the apparent B-partition ratio and the apparent slag mass transfer coefficient were increased by a factor of 1.2 and 1.4, respectively, when a potential difference of 3 V was applied to the phases. The technique has the potential to be used for improving the existing slag refining process by increasing the overall kinetics and the slag capacity to absorb the impurities.