Conference
Surface Activated Bonding of 8 in. Si Wafers for MEMS and Microfluidic Packaging
Abstract
The challenges for direct wafer bonding using surface activated bonding (SAB) method have been investigated. For this purpose, 4–8 in. silicon wafers with and without fine patterns were bonded in vacuum. Three challenges are identified through comprehensive investigations of the bonded interfaces using infrared (IR) transmission, tensile pulling, and high-resolution transmission electron microscopy (HRTEM) observation. First is the alignment …
Authors
Howlader MMR; Suga T
Pagination
pp. 1423-1429
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
May 1, 2009
DOI
10.1109/ectc.2009.5074198
Name of conference
2009 59th Electronic Components and Technology Conference