Conference
Low Temperature Direct Cu-Cu Bonding with Low Energy Ion Activation Method
Abstract
This paper describes a copper wafer bonding for the application of three-dimensional integration and wafer-level packaging. Cu-Cu direct bonding at low temperature using low energy ion activation method was investigated. 8-inch silicon wafers were coated with 80 nm copper and the copper surfaces were cleaned by irradiation of 50–100 eV argon ion beam before mating them together. The cleaned surfaces were examined by Auger electron spectroscope …
Authors
Kim TH; Howlader MMR; Itoh T; Suga T
Pagination
pp. 193-195
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2001
DOI
10.1109/emap.2001.983983
Name of conference
Advances in Electronic Materials and Packaging 2001 (Cat. No.01EX506)