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A two-dimensional DFB laser model accounting for...

Journal article

A two-dimensional DFB laser model accounting for carrier transport effects

Abstract

A two-dimensional numerical model for DFB semiconductor laser simulation is developed and presented. In this model the transverse carrier transport and longitudinal spatial/spectral hole-burning effects in a bulk DFB laser are accounted for rigorously. Comparison with simplified models is made. Methods for improving the accuracy of steady-state and small-signal analyses by the simplified models are proposed and verified.<>

Authors

Sadovnikov AD; Li X; Huang W-P

Journal

IEEE Journal of Quantum Electronics, Vol. 31, No. 10, pp. 1856–1862

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

January 1, 1995

DOI

10.1109/3.466062

ISSN

0018-9197

Associated Experts

Xun Li

Professor, Faculty of Engineering

Labels

Fields of Research (FoR)

4014 Manufacturing Engineering 40 Engineering 4009 Electronics, sensors and digital hardware 5102 Atomic, molecular and optical physics 5108 Quantum physics

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