Conference
Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy
Abstract
We describe preliminary results from studies of the formation of silicon nano-crystals (Si-ncs) embedded in stoichiometric, thermally grown SiO2 using Variable Energy Positron Annihilation Spectroscopy (VEPAS). We show that the VEPAS technique is able to monitor the introduction of structural damage. In SiO2 through the high dose Si+ ion implantation required to introduce excess silicon as a precursor to Si-nc formation. VEPAS is also able to …
Authors
Knights AP; Bradley JDB; Hulko O; Stevanovic DV; Edwards CJ; Kallis A; Coleman PG; Crowe IF; Halsall MP; Gwilliam RM
Volume
262
Publisher
IOP Publishing
Publication Date
January 1, 2011
DOI
10.1088/1742-6596/262/1/012031
Conference proceedings
Journal of Physics Conference Series
Issue
1
ISSN
1742-6588